Resonance dc phenomena in manganite thin films
Abstract
The resonance spin rectification (RSR) and resonance magnetoresistance (RMR) have been studied on La2/3Sr1/3MnO3 epitaxial thin films in the temperature range of 300-365 K, including the Curie point (TC). The RSR effect is found to be caused by anisotropic magnetoresistance under conditions of the magnetic-resonance microwave pumping; it decreases upon heating and disappears at TC. Unlike that, the RMR is maximal at TC and shows clear correlation with the colossal magnetoresistance (CMR) of the material under study. The interpretation implies decreasing of the sample magnetization due to resonance saturation, thus leading to an increase in electric resistivity in terms of the CMR mechanism. Quantitative agreement is demonstrated between the experimental RMR data and theory accounting for Bloch-type relaxation in the vicinity of the phase transition.
Keywords
erromagnetic resonance,
rare-earth manganites,
thin films,
magnetoresistance,
spin rectification,
magnetic relaxation
Supporting agencies: The work was partially supported by the RFBR Grants 11-02-00349 and 14-02-00165.
About the Authors
V. A. Atsarkin
V.A. Kotel'nikov Institute of Radio Engineering and Electronics of RAS
Russian Federation
Russian Federation
125009 Moscow
V. V. Demidov
V.A. Kotel'nikov Institute of Radio Engineering and Electronics of RAS
Russian Federation
Russian Federation
125009 Moscow
B. V. Sorokin
V.A. Kotel'nikov Institute of Radio Engineering and Electronics of RAS
Russian Federation
Russian Federation
125009 Moscow
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Review
For citations:
Atsarkin V.A., Demidov V.V., Sorokin B.V. Resonance dc phenomena in manganite thin films. Magnetic Resonance in Solids. 2014;16(2):14201 (9 pp.).
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