Coherence of optically addressable spin centers created in hexagonal boron nitride by proton irradiation
https://doi.org/10.26907/mrsej-22101
Abstract
Spin-carrying defects possessing optically addressable ground states in semiconductors allow the development of solid-state quantum technologies. Recently such type of defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB-). Here we investigate the possibility to create VB- centers in hBN by irradiation with high-energy protons (EP= 15 MeV), and probe the spin-coherence of the defects. Electron paramagnetic resonance methods show that such irradiation generates the VB- centers. Spin-relaxation times (T1 and T2) of VB- spin ensembles created by proton irradiation are determined to be 20 μs and 4 μs, respectively
Supporting agencies: This research was funded by the Russian Science Foundation grant No. 20-72-10068
About the Authors
M. A. Sadovnikova
Kazan Federal University
Russian Federation
Russian Federation
Kremlevskaya 18, Kazan 420008
G. V. Mamin
Kazan Federal University
Russian Federation
Russian Federation
Kremlevskaya 18, Kazan 420008
R. V. Yusupov
Kazan Federal University
Russian Federation
Russian Federation
Kremlevskaya 18, Kazan 420008
P. P. Kobchikova
Kazan Federal University
Russian Federation
Russian Federation
Kremlevskaya 18, Kazan 420008
F. F. Murzakhanov
Kazan Federal University
Russian Federation
Russian Federation
Kremlevskaya 18, Kazan 420008
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Review
For citations:
Sadovnikova M.A., Mamin G.V., Yusupov R.V., Kobchikova P.P., Murzakhanov F.F. Coherence of optically addressable spin centers created in hexagonal boron nitride by proton irradiation. Magnetic Resonance in Solids. 2022;24(1):22101(6 pp.). https://doi.org/10.26907/mrsej-22101
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