Ferromagnetism in Thin Films of Germanium and Silicon Supersaturated by Manganese or Iron Impurities
Abstract
We inform an opportunity of a laser synthesis of the diluted magnetic semiconductors on the basis of germanium and silicon, doped by manganese or iron till 10-15 at. %. Thin 50-110 nanometers thickness layers Ge and Si were grown on heated up to 200-480?C monocrystal substrates of gallium arsenide or sapphire. The content of a 3d-impurity was measured by x-ray spectral method. The ferromagnetism of layers, high magnetic and acceptor activity of Mn in Ge, of Mn and Fe in Si were appeared in observation at 77-500 K of Kerr effect, abnormal Hall effect, high hole conductivity and anisotropic ferromagnetic resonance (FMR). On the FMR data the Curie point of Ge:Mn , Si:Mn on GaAs substrates and Si:Fe on Al2O3 were not lower 420, 500 and 220 K, respectively.
Supporting agencies: This work was supported by the State Program "Universities of Russia", grant No.513 (UR01.01.174), and the Russian Foundation for Basic Research, grant 05-02-17362, RAS Program “Spin-dependent effects in solids and spintronics” and grant ISTC G1335.
About the Authors
D. M. Druzhnov
Nizhni Novgorod State University
Russian Federation
Russian Federation
Gagarin prospect 23, Nizhni Novgorod 603950
E. S. Demidov
Nizhni Novgorod State University
Russian Federation
Russian Federation
Gagarin prospect 23, Nizhni Novgorod 603950
Yu. A. Danilov
Nizhni Novgorod State University; Institute for Physics of Microstructures, RAS
Russian Federation
Russian Federation
Gagarin prospect 23, Nizhni Novgorod 603950; Nizhni Novgorod 603950
Yu. N. Drosdov
Institute for Physics of Microstructures, RAS
Russian Federation
Russian Federation
Nizhni Novgorod 603950
V. P. Lesnikov
Nizhni Novgorod State University
Russian Federation
Russian Federation
Gagarin prospect 23, Nizhni Novgorod 603950
V. V. Podolskii
Nizhni Novgorod State University
Russian Federation
Russian Federation
Gagarin prospect 23, Nizhni Novgorod 603950
M. V. Sapozhnikov
Institute for Physics of Microstructures, RAS
Russian Federation
Russian Federation
Nizhni Novgorod 603950
S. N. Gusev
Nizhni Novgorod State University
Russian Federation
Russian Federation
Gagarin prospect 23, Nizhni Novgorod 603950
A. I. Suchkov
Institute for chemistry of high-purity substances, RAS
Russian Federation
Russian Federation
Nizhni Novgorod 603950
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Review
For citations:
Druzhnov D.M., Demidov E.S., Danilov Yu.A., Drosdov Yu.N., Lesnikov V.P., Podolskii V.V., Sapozhnikov M.V., Gusev S.N., Suchkov A.I. Ferromagnetism in Thin Films of Germanium and Silicon Supersaturated by Manganese or Iron Impurities. Magnetic Resonance in Solids. 2006;8(1):43-47.
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