Spin Relaxation of Electrons Localized on Shallow and Deep Donor Centers in Silicon with Different Isotopic Composition
Abstract
The results of a numerical calculation of the contribution of ligand superhyperfine interactions to the line width for the phosphorus donor electron in silicon are reported and show linear behavior at lower concentrations compared to deep centers. The linear dependence for the phosphorus center in silicon predicts an electron spin-relaxation time for isotopically purified 28Si:P longer than expected on the basis of the common square-root law. The spin-lattice relaxation processes in chromium doped silicon samples enriched by 28Si isotope and with natural isotopic abundances were studied.
Keywords
electron paramagnetic resonance,
line width,
hyperfine interaction,
silicon,
paramagnetic centers,
isotopic enrichmen
Supporting agencies: This work was supported in part by RFBR, grant № 05-02-16449.
About the Authors
D. V. Guseinov
Nizhni Novgorod State University
Russian Federation
Russian Federation
Gagarin prospect 23, Nizhni Novgorod 603950
A. A. Ezhevskii
Nizhni Novgorod State University
Russian Federation
Russian Federation
Gagarin prospect 23, Nizhni Novgorod 603950
References
1. De Sousa R., Das Sarma S. Phys. Rev. B 67, 033301 (2003).
2. Guseinov D.V., Ezhevskii A.A., Ammerlaan C.A.J. Physica B. 381, 164 (2006).
3. Emtsev Jr. V.V., Ammerlaan C.A.J., Ezhevskii A.A., Gusev A.V. Physica B. 376, 45 (2006)
4. Feher G. Phys. Rev. 114,1219 (1959).
5. Tyryshkin A.M., Lyon S.A., Astashkin A.V., Raitsimring A.M. Phys. Rev. B. 68, 193207 (2003).
6. Abragam A., Bleaney B. Electron paramagnetic resonance of transition ions. Oxford, Clarendon Press (1970).
7. Roufosse M., Klemens P.G. Phys.Rev.B. 7, 5379 (1973).
Review
For citations:
Guseinov D.V., Ezhevskii A.A. Spin Relaxation of Electrons Localized on Shallow and Deep Donor Centers in Silicon with Different Isotopic Composition. Magnetic Resonance in Solids. 2006;8(1):48-52.
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