Photoinduced EPR and ENDOR studies of the divacancies and nitrogen-vacancy defects in silicon carbide
https://doi.org/10.26907/mrsej-24208
Abstract
Defects (color centers) in wide-gap semiconductors are considered as the basis for the realization of highly sensitive sensors, single-photon sources, and for the implementation of quantum technologies. Silicon carbide (SiC) crystal can serve as a reliable solid-state matrix for the range of high-spin (electron spin S = 1) color centers to become an alternative to the diamond with the widely-known nitrogen-vacancy (NV-) centers. This paper reviews the electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) studies of the divacancies (VV) and negatively charged NV- centers in different SiC polytypes. The main spin Hamiltonian components of non-equivalent spin defects in SiC are presented depending on their structural features (positions) and local environment: the zero-field splitting (D ≈ 1.3 GHz), hyperfine (A ≈ 1.1 MHz) and quadrupole (P ≈ 1.8 MHz) interaction values. The luminescence spectrum of the color center in SiC (λ = 1.1-1.25μm) in near-IR range is favorable for fiber-optic channels (O-band) and biological objects study, which brings these defects to a higher level of practical application.
Keywords
Supporting agencies: The study was funded by the subsidy allocated to Kazan Federal University for the state assignment in the sphere of scientific activities (Project No. FZSM-2024-0010).
About the Authors
F. F. Murzakhanov
Kazan Federal University
Russian Federation
Russian Federation
Kazan 420008
L. R. Latypova
School of Chemistry and Chemical Engineering, Harbin Institute of Technology; Zhengzhou Research Institute, Harbin Institute of Technology
China
China
Harbin 150001
Zhengzhou 450000
G. V. Mamin
Kazan Federal University
Russian Federation
Russian Federation
Kazan 420008
M. A. Sadovnikova
Kazan Federal University
Russian Federation
Russian Federation
Kazan 420008
H. J. von Bardeleben
Sorbonne Universit´e, Campus Pierre et Marie Curie, Institut des Nanosciences de Paris
France
France
Paris 75005
M. R. Gafurov
Kazan Federal University
Russian Federation
Russian Federation
Kazan 420008
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Review
For citations:
Murzakhanov F.F., Latypova L.R., Mamin G.V., Sadovnikova M.A., von Bardeleben H.J., Gafurov M.R. Photoinduced EPR and ENDOR studies of the divacancies and nitrogen-vacancy defects in silicon carbide. Magnetic Resonance in Solids. 2024;26(2):24208 (10 pp.). https://doi.org/10.26907/mrsej-24208
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