Temperature dependence of the conduction electron g-factor in silicon: theory and experiment
Abstract
Temperature dependence of the conduction electron Lande g-factor in silicon has been investigated both theoretically and experimentally. Theoretical consideration is based on the renormalization of the electron energy in the magnetic field by the electron-phonon interaction in the second-order perturbation theory. Interaction with lattice vibrations decreases the conduction electron g-factor. The g-factor was measured in the electron spin resonance experiments for n-Si samples. In the high temperature limit the g-factor linearly decreases with temperature in good agreement with the experimental data.
Keywords
About the Authors
A. A. KonakovRussian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
A. A. Ezhevskii
Russian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
A. V. Soukhorukov
Russian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
D. V. Guseinov
Russian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
S. A. Popkov
Russian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
V. A. Burdov
Russian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
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Review
For citations:
Konakov A.A., Ezhevskii A.A., Soukhorukov A.V., Guseinov D.V., Popkov S.A., Burdov V.A. Temperature dependence of the conduction electron g-factor in silicon: theory and experiment. Magnetic Resonance in Solids. 2011;13(2):14-20.