Temperature dependence of the conduction electron g-factor in silicon: theory and experiment
Abstract
Temperature dependence of the conduction electron Lande g-factor in silicon has been investigated both theoretically and experimentally. Theoretical consideration is based on the renormalization of the electron energy in the magnetic field by the electron-phonon interaction in the second-order perturbation theory. Interaction with lattice vibrations decreases the conduction electron g-factor. The g-factor was measured in the electron spin resonance experiments for n-Si samples. In the high temperature limit the g-factor linearly decreases with temperature in good agreement with the experimental data.
Keywords
g-factor,
electron-phonon interaction,
spin flip,
renormalization,
temperature dependence,
conduction electron spin resonance
Supporting agencies: The authors thank the “Dynasty” Foundation, RFBR, and the Russian Ministry of Education and Science who financially supported the work through the project RNP 2.1.1/10875, and contracts No 07.514.11.4012 and No 16.740.11.0202.
About the Authors
A. A. Konakov
University of Nizhniy Novgorod
Russian Federation
Russian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
A. A. Ezhevskii
University of Nizhniy Novgorod
Russian Federation
Russian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
A. V. Soukhorukov
University of Nizhniy Novgorod
Russian Federation
Russian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
D. V. Guseinov
University of Nizhniy Novgorod
Russian Federation
Russian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
S. A. Popkov
University of Nizhniy Novgorod
Russian Federation
Russian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
V. A. Burdov
University of Nizhniy Novgorod
Russian Federation
Russian Federation
Gagarin ave. 23, Nizhniy Novgorod 603950
References
1. Appelbaum I., Huang B., Monsma D.J. Nature (London) 447, 295 (2007)
2. Elliott R.J. Phys. Rev. 96, 266 (1954)
3. Yafet Y. in Solid State Physics, edited by F. Seitz and D. Turnbull (Academic, New York, 1963), Vol. 14, p. 1
4. Cheng J.L., Wu M.W., Fabian J. Phys. Rev. Lett. 104, 016601 (2010)
5. Wilson D.K., Feher G. Phys. Rev. 124, 1068 (1961)
6. Ezhevskii A.A., Soukhorukov A.V., Guseinov D.V., Popkov S.A., Gusev A.V., Gavva V.A. AIP Conf. Proc. 1399 (accepted for publication)
7. Cardona M. Phys. Stat. Sol. (a) 188, 1209 (2001)
8. Mahan G.D. Many-Particle Physics, Plenum Press, New York (1990)
9. Batyev E.G. Physics – Uspekhi 52, 1245 (2009)
10. Anselm A. Introduction to Semiconductor Theory, Prentice-Hall, Englewood Cliffs, NJ (1981)
11. Pop E., Dutton R.W., Goodson K.E. J. Appl. Phys. 96, 4998 (2004)
Review
For citations:
Konakov A.A., Ezhevskii A.A., Soukhorukov A.V., Guseinov D.V., Popkov S.A., Burdov V.A. Temperature dependence of the conduction electron g-factor in silicon: theory and experiment. Magnetic Resonance in Solids. 2011;13(2):14-20.
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