Broadening of the silicon vacancy EPR line in SiC revealed through optically selective excitation
https://doi.org/10.26907/mrsej-24218
Abstract
In SiC crystal enriched by 28Si isotope with nuclear spin I = 0, two negatively charged silicon vacancy centers VSi-, Vk1 and Vk2 were investigated using X-band CW electron paramagnetic resonance (EPR) spectroscopy combined with tunable Ti-sapphire laser excitation. For the Vk1 and Vk2 centers, the EPR line position depends on the optical excitation energy which demonstrates inhomogeneous broadening of the optical transition correlated with variations in the zero field splitting.
Keywords
electron paramagnetic resonance,
photoluminescence,
resonant optical excitation,
silicon carbide,
silicon vacancy
Supporting agencies: The study was partially funded by the subsidy allocated to Kazan Federal University for the state assignment in the sphere of scientific activities (Project No. FZSM-2024-0010).
About the Authors
B. V. Yavkin
CEA, SPEC
France
France
Gif-sur-Yvette 91191
V. A. Soltamov
Ioffe Institute
Russian Federation
Russian Federation
St. Petersburg 194021
F. F. Murzakhanov
Kazan Federal University
Russian Federation
Russian Federation
Kazan 420008
G. V. Mamin
Kazan Federal University
Russian Federation
Russian Federation
Kazan 420008
E. N. Mokhov
Ioffe Institute
Russian Federation
Russian Federation
St. Petersburg 194021
E. Goovaerts
University of Antwerp
Belgium
Belgium
Wilrijk 2610
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Review
For citations:
Yavkin B.V., Soltamov V.A., Murzakhanov F.F., Mamin G.V., Mokhov E.N., Goovaerts E. Broadening of the silicon vacancy EPR line in SiC revealed through optically selective excitation. Magnetic Resonance in Solids. 2024;26(2):24218 (7 pp.). https://doi.org/10.26907/mrsej-24218
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